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ccd area image sensors back-thinned fft-ccd s7030/s7031 series www.hamamatsu.com 1 the s7030/s7031 series is a family of fft-ccd image sensors speci ? cally designed for low-light-level detection in scienti ? c ap- plications. by using the binning operation, the s7030/s7031 series can be used as a linear image sensor having a long aperture in the direction of the device length. this makes the s7030/s7031 series suited for use in spectrophotometry. the binning opera - tion offers signi ? cant improvement in s/n and signal processing speed compared with conventional methods by which signals are digitally added by an external circuit. the s7030/s7031 series also features low noise and low dark signal (mpp mode operation) . this enables low-light-level detection and long integration time, thus achieving a wide dynamic range. the s7030/s7031 series has an effective pixel size of 24 24 ? m and is available in image areas ranging from 12.288 (h) 1.392 (v) mm 2 (512 58 pixels) up to a large image area of 24.576 (h) 2.928 (v) mm 2 (1024 250 pixels). features applications non-cooled type: s7030 series one-stage te-cooled type: s7031 series pixel size: 24 24 ? m line, pixel binning wide spectral response range low readout noise wide dynamic range mpp operation high uv sensitivity with good stability greater than 90% quantum ef ? ciency at peak sensitivity wavelength fluorescence spectrometer, icp industrial inspection semiconductor inspection dna sequencer low-light-level detection raman spectrometer selection guide type no. cooling number of total pixels number of active pixels active area [mm (h) mm (v)] suitable multichannel detector head s7030-0906 non-cooled 532 64 512 58 12.288 1.392 c7040 S7030-0907 532 128 512 122 12.288 2.928 s7030-1006 1044 64 1024 58 24.576 1.392 s7030-1007 1044 128 1024 122 24.576 2.928 s7031-0906s one-stage te-cooled 532 64 512 58 12.288 1.392 c7041 s7031-0907s 532 128 512 122 12.288 2.928 s7031-1006s 1044 64 1024 58 24.576 1.392 s7031-1007s 1044 128 1024 122 24.576 2.928
ccd area image sensors s7030/s7031 series 2 general ratings absolute maximum ratings (ta=25 c) operating conditions (mpp mode, ta=25 c) parameter s7030 series s7031 series pixel size 24 (h) 24 (v) ? m vertical clock phase 2 phases horizontal clock phase 2 phases output circuit one-stage mosfet source follower package 24-pin ceramic dip (refer to dimensional outlines) window * 1 quartz glass ar-coated sapphire * 1: temporary window type (ex. s7030-0906n) is available upon request. (temporary window is ? xed by tape to protect the ccd chip and wire bonding.) parameter symbol min. typ. max. unit operating temperature * 2 to p r - 5 0 - + 5 0 c storage temperature tstg -50 - +70 c output transistor drain voltage v od -0.5 - +25 v reset drain voltage v rd -0.5 - +18 v vertical input source voltage v isv -0.5 - +18 v horizontal input source voltage v ish -0.5 - +18 v vertical input gate voltage v ig1v , v ig2v -10 - +15 v horizontal input gate voltage v ig1h , v ig2h -10 - +15 v summing gate voltage v sg -10 - +15 v output gate voltage v og -10 - +15 v reset gate voltage v rg -10 - +15 v transfer gate voltage v tg -10 - +15 v vertical shift register clock voltage v p1v , v p2v -10 - +15 v horizontal shift register clock voltage v p1h, v p2h -10 - +15 v * 2: package temperature (s7030 series), chip temperature (s7031 series) parameter symbol min. typ. max. unit output transistor drain voltage v od 18 20 22 v reset drain voltage v rd 11.5 12 12.5 v output gate voltage v og 135v substrate voltage v ss -0-v test point vertical input source v isv -v rd -v horizontal input source v ish -v rd -v vertical input gate v ig1v , v ig2v -9 -8 - v horizontal input gate v ig1h , v ig2h -9 -8 - v vertical shift register clock voltage high v p1vh , v p2vh 468 v low v p1vl , v p2vl -9 -8 -7 horizontal shift register clock voltage high v p1hh , v p2hh 468 v low v p1hl , v p2hl -9 -8 -7 summing gate voltage high v sgh 468 v low v sgl -9 -8 -7 reset gate voltage high v rgh 468 v low v rgl -9 -8 -7 transfer gate voltage high v tgh 468 v low v tgl -9 -8 -7 external load resistance r l 20 22 24 k :
ccd area image sensors s7030/s7031 series 3 electrical characteristics (ta=25 c) electrical and optical characteristics (ta=25 c, unless otherwise noted) parameter symbol min. typ. max. unit signal output frequency fc - 0.25 1 mhz vertical shift register capacitance s703 * -0906 c p1v, c p2v - 750 - pf s703 * -0907/-1006 - 1500 - s703 * -1007 - 3000 - horizontal shift register capacitance s703 * -0906/-0907 c p1h , c p2h - 110 -pf s703 * -1006/-1007 180 summing gate capacitance c sg -30-pf reset gate capacitance c rg -30-pf transfer gate capacitance s703 * -0906/-0907 c tg - 55 -pf s703 * -1006/-1007 75 charge transfer ef ? ciency * 3 cte 0.99995 0.99999 - - dc output level * 4 vout 14 16 18 v output impedance * 4 zo - 3 4 k : power consumption * 4 * 5 p - 13 14 mw * 3: charge transfer ef ? ciency per pixel, measured at half of the full well capacity * 4: the values depend on the load resistance. (typical, v od =20 v, load resistance=22 k : ) * 5: power consumption of the on-chip ampli ? er plus load resistance parameter symbol min. typ. max. unit saturation output voltage vsat - fw sv - v full well capacity vertical fw 240 320 - ke - horizontal * 6 800 1000 - ccd node sensitivity sv 1.8 2.2 - ? v/e - dark current * 7 (mpp mode) 25 c ds - 100 1000 e - /pixel/s 0 c - 10 100 readout noise * 8 nr - 8 16 e - rms dynamic range * 9 line binning dr 100000 125000 - - area scanning 30000 40000 - - photo response non-uniformity * 10 prnu - 3 10 % spectral response range o - 200 to 1100 - nm blemish point defect * 11 white spots - --0- black spots - - 10 - cluster defect * 12 --3- column defect * 13 --0- * 6: the linearity is 1.5%. * 7: dark current nearly doubles for every 5 to 7 c increase in temperature. * 8: measured with a hamamatsu c4880 digital ccd camera with a cds circuit (sensor temperature: -40 c, operating frequency: 150 khz) * 9: dynamic range = full well capacity / readout noise * 10: measured at one-half of the saturation output (full well capacity) using led light (peak emission wavelength: 560 nm) * 11: white spots pixels whose dark current is higher than 1 ke - after one-second integration at 0 c. black spots pixels whose sensitivity is lower than one-half of the average pixel output. (measured with uniform light producing one-half of the saturation charge) * 12: 2 to 9 contiguous defective pixels * 13: 10 or more contiguous defective pixels fixed pattern noise (peak to peak) signal 100 [%] photo response non-uniformity =
ccd area image sensors s7030/s7031 series spectral response (without window) * 14 dark current vs. temperature spectral transmittance characteristics kmpdb0058eb 4 * 14: spectral response with quartz glass or ar-coated sapphire is decreased according to the spectral transmittance characteristic o f window material. type no. window material s7030 series quartz glass * 15 (option: window-less) s7031 series ar-coated sapphire * 16 (option: window-less) s7032-1006/-1007 (two-stage te-cooled types, made to order) ar-coated sapphire * 16 (option: window-less) * 15: resin sealing * 16: hermetic sealing window material quantum efficiency (%) wavelength (nm) (typ. ta=25 c) 0 200 400 600 800 1000 1200 10 20 30 40 50 60 70 80 90 100 front-illuminated ccd front-illuminated ccd (uv coated) back-thinned ccd 0 10 100 200 wavelength (nm) transmittance (%) 300 400 500 600 700 800 900 1000 1100 1200 20 30 40 50 60 70 80 90 100 (typ. ta=25 c) quartz window ar-coated sapphire -50 -40 -30 -20 0 -10 10 20 30 temperature (c) 0.01 1 0.1 10 100 1000 dark current (e - /pixel/s) (typ.) kmpdb0110ea kmpdb0256ea
ccd area image sensors s7030/s7031 series kmpdc0016ec device structure (conceptual drawing of top view) 23 22 21 20 14 15 24 1 2 12 11 89 3 4 5 2-bevel signal out 2 n 4 blank pixels 4 blank pixels v=58, 122 h=512, 1024 4-bevel thinning thinning 1 23 45 2 3 4 5 v h 6-bevel 6-bevel 2 n signal out 13 10 5
ccd area image sensors s7030/s7031 series 6 line binning timing chart parameter symbol min. typ. max. unit p1v, p2v, tg * 17 pulse width s703 * -0906 tpwv 1.5 2 - ? s s703 * -0907/-1006 3 4- s703 * -1007 6 8- rise and fall time tprv, tpfv 10 - - ns p1h, p2h * 17 pulse width tpwh 500 2000 - ns rise and fall time tprh, tpfh 10 - - ns duty ratio - - 50 - % sg pulse width tpws 500 2000 - ns rise and fall time tprs, tpfs 10 - - ns duty ratio - - 50 - % rg pulse width tpwr 100 - - ns rise and fall time tprr, tpfr 5 - - ns tg ? p1h overlap time tovr 3 - - ? s * 17: the clock pulses should be overlapped at 50% of clock pulse amplitude. integration period (shutter must be open.) vertical binning period (shutter must be closed.) p1v p2v, tg p1h p2h, sg readout period (shutter must be closed.) 3.. 62 3..126 63 127 64 128 58 + 6 (bevel): s703 * -0906/-1006 122 + 6 (bevel): s703 * -0907/-1007 tpwv tov r tpwh, tpws tpwr 123 531 1043 532 1044 : s703 * -0906/-0907 : s703 * -1006/-1007 4..530 4..1042 12 d19 d2..d10, d1 d20 d20 d2..d10, s1..s1024, d11..d19 d1 rg os s1..s512, d11.. : s703 * -0906/-0907 : s703 * -1006/-1007 kmpdc0017ed
ccd area image sensors s7030/s7031 series 7 area scanning: large full well mode integration period (shutter must be open.) p1v rg os p2v, tg p1h p2h, sg readout period (shutter must be closed.) enlarged view tpwv tov r tpwr d1 d2 d3 d4 d18 d19 d20 d5..d10, s1..s1024, d11..d17 p2v, tg p1h p2h, sg rg os tpwh, tpws 123 s1..s512 : s703 * -0906/-0907 : s703 * -1006/-1007 4.. 63 4..127 64 58 + 6 (bevel): s703 * -0906/-1006 128 122 + 6 (bevel): s703 * -0907/-1007 parameter symbol min. typ. max. unit p1v, p2v, tg * 18 pulse width s703 * -0906 tpwv 1.5 2 - ? s s703 * -0907/-1006 3 4- s703 * -1007 6 8- rise and fall time tprv, tpfv 10 - - ns p1h, p2h * 18 pulse width tpwh 500 2000 - ns rise and fall time tprh, tpfh 10 - - ns duty ratio - - 50 - % sg pulse width tpws 500 2000 - ns rise and fall time tprs, tpfs 10 - - ns duty ratio - - 50 - % rg pulse width tpwr 100 - - ns rise and fall time tprr, tpfr 5 - - ns tg ? p1h overlap time tovr 3 - - ? s * 18: the clock pulses should be overlapped at 50% of clock pulse amplitude. kmpdc0127ec
ccd area image sensors s7030/s7031 series 8 dimensional outlines (unit: mm) s7030-0906/-0907 s7030-1006/-1007 4.4 0.44 4.8 0.49 2.35 0.15 3.75 0.44 photosensitive surface 1st pin indication pad 3.0 (24 ) 0.5 0.05 window 16.3 * 8.2 * 34.0 0.34 2.54 0.13 22.9 0.30 22.4 0.30 a active area 12.29 24 1 12 13 s7030-0906: a=1.392 S7030-0907: a=2.928 * size of window that guarantees the transmittance in the spectral transmittance characteristics graph 3.0 photosensitive surface 4.4 0.44 2.35 0.15 4.8 0.49 3.75 0.44 window 28.6 * 22.9 0.30 22.4 0.30 active area 24.58 a 8.2 * 44.0 0.44 2.54 0.13 1st pin indication pad s7030-1006: a=1.392 s7030-1007: a=2.928 * size of window that guarantees the transmittance in the spectral transmittance characteristics graph (24 ) 0.5 0.05 24 112 13 kmpda0046ef kmpda0047eg
ccd area image sensors s7030/s7031 series s7031-0906s/-0907s s7031-1006s/-1007s window 16.3 * 8.2 * 34.0 0.34 50.0 0.30 2.54 0.13 22.9 0.30 19.0 4.0 42.0 22.4 0.30 a 7.3 0.63 1.0 7.7 0.68 6.65 0.63 4.89 0.15 active area 12.29 photosensitive surface 1st pin indication pad 3.0 te-cooler s7031-0906s: a=1.392 s7031-0907s: a=2.928 * size of window that guarantees the transmittance in the spectral transmittance characteristics graph (24 ) 0.5 0.05 1 24 13 12 (24 ) 0.5 0.05 7.3 0.63 1.0 3.0 6.65 0.63 4.89 0.15 photosensitive surface 7.7 0.68 1st pin indication pad a 4.0 19.0 22.4 0.30 22.9 0.30 44.0 0.44 52.0 60.0 0.30 2.54 0.13 window 28.6 * active area 24.58 8.2 * s7031-1006s: a=1.392 s7031-1007s: a=2.928 te-cooler * size of window that guarantees the transmittance in the spectral transmittance characteristics graph 112 13 24 kmpda0048eg kmpda0049eh 9
ccd area image sensors s7030/s7031 series 10 speci ? cations of built-in te-cooler (typ. vacuum condition) pin connections parameter symbol condition s7031-0906s/-0907s s7031-1006s/-1007s unit internal resistance rint ta=25 c 2.5 1.2 : maximum current * 20 imax tc * 21 =th * 22 =25 c 1.5 3.0 a maximum voltage vmax tc * 21 =th * 2 2 =25 c 3.8 3.6 v maximum heat absorption * 23 qmax 3.4 5.1 w maximum temperature of heat radiating side -7070c * 20: if the current greater than this value ows into the thermoelectric cooler, the heat absorption begins to decrease due to the joule heat. it should be noted that this value is not the damage threshold value. to protect the thermoelectric cooler and maintain s table operation, the supply current should be less than 60% of this maximum current. * 21: temperature of the cooling side of thermoelectric cooler * 22: temperature of the heat radiating side of thermoelectric cooler * 23: this is a theoretical heat absorption level that offsets the temperature difference in the thermoelectric cooler when the m aximum current is supplied to the unit. pin no. s7030 series s7031 series remark (standard operation) symbol function symbol function 1 rd reset drain rd reset drain +12 v 2 os output transistor source os output transistor source r l =22 k : 3 od output transistor drain od output transistor drain +20 v 4 og output gate og output gate +3 v 5 sg summing gate sg summing gate same pulse as p2h 6- - 7- - 8 p2h ccd horizontal register clock-2 p2h ccd horizontal register clock-2 9 p1h ccd horizontal register clock-1 p1h ccd horizontal register clock-1 10 ig2h test point (horizontal input gate-2) ig2h test point (horizontal input gate-2) -8 v 11 ig1h test point (horizontal input gate-1) ig1h test point (horizontal input gate-1) -8 v 12 ish test point (horizontal input source) ish test point (horizontal input source) connect to rd 13 tg * 19 transfer gate tg * 19 transfer gate same pulse as p2v 14 p2v ccd vertical register clock-2 p2v ccd vertical register clock-2 15 p1v ccd vertical register clock-1 p1v ccd vertical register clock-1 16 - th1 thermistor 17 - th2 thermistor 18 - p- te-cooler- 19 - p+ te-cooler+ 20 ss substrate (gnd) ss substrate (gnd) gnd 21 isv test point (vertical input source) isv test point (vertical input source) connect to rd 22 ig2v test point (vertical input gate-2) ig2v test point (vertical input gate-2) -8 v 23 ig1v test point (vertical input gate-1) ig1v test point (vertical input gate-1) -8 v 24 rg reset gate rg reset gate * 19: isolation gate between vertical register and horizontal register. in standard operation, tg should be applied the same puls e as p2v.
ccd area image sensors s7030/s7031 series 11 kmpdb0179ea kmpdb0111eb s7031-0906s/-0907s s7031-1006s/-1007s 0 1 2 3 voltage (v) ccd temperature (c) 4 7 6 5 -40 -30 2.0 1.5 1.0 current (a) 0.5 0 -20 -10 0 10 20 30 (typ. ta=25 c) voltage vs. current ccd temperature vs. current 0 1 2 3 voltage (v) ccd temperature (c) 4 7 6 5 -40 -30 4 3 2 current (a) 1 0 -20 -10 0 10 20 30 (typ. ta=25 c) voltage vs. current ccd temperature vs. current specifications of built-in temperature sensor a thermistor chip is built in the same package with a ccd chip, and the ccd chip temperature can be monitored with it. a relati on between the thermistor resistance and absolute temperature is expressed by the following equation. r t1 = r t2 exp b t1/t2 (1/t1 - 1/t2) r t1 : resistance at absolute temperature t1 [k] r t2 : resistance at absolute temperature t2 [k] b t1/t2 : b constant [k] the characteristics of the thermistor used are as follows. r 298 =10 k : b 298/323 =3450 k kmpdb0178ea 10 k 220 240 260 temperature (k) resistance 280 300 100 k 1 m
cat. no. kmpd1023e17 jan. 2011 dn ccd area image sensors s7030/s7031 series www.hamamatsu.com information described in this material is current as of january, 2011. product specifications are subject to change without pri or notice due to improvements or other reasons. before assembly into final products, please contact us for the delivery specification sheet to check the latest inform ation. type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(x)" which means preliminary specifications or a suffix "(z)" which means developmental specifications. the product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovere d and reported to us within that one year period. however, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. hamamatsu photonics k.k., solid state division 1126-1 ichino-cho, higashi-ku, hamamatsu city, 435-8558 japan, telephone: (81) 53-434-3311, fax: (81) 53-434-5184 u.s.a.: hamamatsu corporation: 360 foothill road, p.o.box 6910, bridgewater, n.j. 08807-0910, u.s.a., telephone: (1) 908-231-0 960, fax: (1) 908-231-1218 germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49) 8152- 375-0, fax: (49) 8152-265-8 france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, teleph one: 33-(1) 69 53 71 00, fax: 33-(1) 69 53 71 10 united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road, welwyn garden city, hertfordshire al7 1bw, unit ed kingdom, telephone: (44) 1707-294888, fax: (44) 1707-325777 north europe: hamamatsu photonics norden ab: smidesv?gen 12, se-171 41 solna, sweden, telephone: (46) 8-509-031-00, fax: (46) 8 -509-031-01 italy: hamamatsu photonics italia s.r.l.: strada della moia, 1 int. 6, 20020 arese, (milano), italy, telephone: (39) 02-935-81- 733, fax: (39) 02-935-81-741 precaution for use (electrostatic countermeasures) element cooling/heating temperature incline rate o handle these sensors with bare hands or wearing cotton gloves. in addition, wear anti-static clothing or use a wrist band with an earth ring, in order to prevent electrostatic damage due to electrical charges from friction. o avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge. o provide ground lines or ground connection with the work- oor, work-desk and work-bench to allow static electricity to discharge. o ground the tools used to handle these sensors, such as tweezers and soldering irons. it is not always necessary to provide all the electrostatic measures stated above. implement these measures according to the am ount of damage that occurs. when cooling the ccd by an externally attached cooler, set the cooler operation so that the temperature gradient (rate of tempe rature change) for cooling or allowing the ccd to warm back is less than 5 k/minute. 12 multichannel detector heads c7040, c7041 features c7040: for s7030 series c7041: for s7031 series area scanning or full line-binnng operation readout frequency: 250 khz readout noise: 20 e - rms ' t=50 c ( ' t changes by cooling method.) input symbol value supply voltage v d1 v a1+ v a1- v a2 v d2 vp v f +5 vdc, 200 ma +15 vdc, +100 ma -15 vdc, -100 ma +24 vdc, 30 ma +5 vdc, 30 ma (c7041) +5 vdc, 2.5 a (c7041) +12 vdc, 100 ma (c7041) master start i ms hcmos logic compatible master clock i mc hcmos logic compatible, 1 mhz

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